The Program 2024
High-profile researchers in the field of HiPIMS has been invited.
They will give oral presentations.
You will be able to interaction with
the speakers, exhibitors, and breakout room presenters as with all participants of the workshop.
* Please note that the time schedule of Day 2 is different with Day 1 and 3.
Color code of the categories
Plasma
Modeling & simulations
Processes
Film
Applications
Time zones
CET: UTC +1, US/CA: UTC-7, CHN :UTC+8, JPN: UTC+9
6:00 -6:20 UTC
Johan Böhlmark,
Ionautics AB, Sweden
Historical on HiPIMS in cutting tools
6:20 -6:40 UTC
Ralf Bandorf, Fraunhofer IST, Germany
Industrial Scale Reactive HIPIMS of Oxide Materials
6:40 -6:50 UTC
Dermot Monaghan, Gencoa, UK
Optimizing magnetic design for HiPIMS processes
6:50 -7:00 UTC
Thomas Schütte, PLASUS, Germany
Next level of process control for HiPIMS application: Continuous pulse-resolved spectroscopic plasma monitoring with the new EMICON FS system
13:00 -13:20 UTC
Tomas Kozak,
University of West Bohemia, Czech Republic
Modelling of HiPIMS discharges via particles: density distribution of atoms and ions
13:20 -13:40 UTC
Pierre-Yves Jouan, Nantes University, France
Time-Resolved Optical Analysis of e-HiPIMS Discharge
13:40 -14:00 UTC
Ching-Lien Hsiao, Linköping University, Sweden
Magnetron sputter epitaxy of nitride semiconductor thin films and the effect of HiPIMS-grown AlN buffer layers
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6:00 -6:20 UTC
Hicham Larhlimi, Ionbond - IHI group, Netherlands
Effect of the carbon content on the mechanical, tribological, and anti-corrosion properties of TiC
6:20 -6:40 UTC
Takeo Nakano, Seikei University, Japan
Application of triode HPPMS for fabrication of Spindt-type micro vacuum electron emitter array
6:40 -6:50 UTC
Radek Zemlicka, Evatec, Switzerland
Enhancing Reactive HiPIMS Process Control:
A Method for Large Targets and Diverse Parameters
6:50 -7:00 UTC
Patrick Sturm,
TOFWERK, Switzerland
Energy-Resolved Time-of-Flight Mass Spectrometry for Bulk Plasma Analysis
8:00 -8:20 UTC
Bocong Zheng, Beijing Institute of Technology, China
Kinetic investigation on HiPIMS discharges in 1D particle simulation
8:20 -8:40 UTC
Jyotish Patidar,EMPA, Switzerland
Metal-ion-synchronized HiPIMS of piezoelectric AlScN films
8:40 -9:00 UTC
Martin Cada, Institute of Physics of the Czech Academy of Sciences, Czech Republic
Total ion flux and IEDF measurement of HiPIMS+Arc hybrid deposition process of ta-C
15:00 -15:20 UTC
Sergej Kucheyev, Lawrence Livermore Nat. Lab, US
Deposition of ultrathick heavy-metal alloys by HiPIMS
15:20 -15:40 UTC
Pedro Renato Tavares Avila, Polytechnique Montréal, Canada
In-situ monitoring of stress development in HiPIMS deposited TiAlN films
15:40 -16:00 UTC
Julian Held, University of Minnesota, US
Ionization of sputtered species for different target materials
8:00 -8:20 UTC
Flyura Djurabekova, University of Helsinki, Finland
Molecular dynamics study of growth mechanisms of Nb on Cu for superconducting thin film applications during direct current and high power impulse magnetron sputtering deposition
8:20 -8:40 UTC
Babak Bakhit, University of Cambridge, UK
Hybrid DCMS/HiPIMS co-sputtering: a proper tool for engineering nanostructure and properties of diboride thin films
8:40 -9:00 UTC
Jörg Vetter, S3 Consulting, Germany
Industrial aspects of HiPIMS technology: processes and applications